26 June 2003 Image performance and mask characterization of 157-nm alternating phase-shifting mask
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In this paper, we present a process of balancing the aerial image and analyzing the results of resist images of 157-nm alternating PSM with a 0.85 NA lens. The mask is made by dual trench technique with a phase-etch of 115nm and an isotropic under-etch of 90nm as predicted by simulations. With this dual trenched mask, the wafer printing images show tremendous improvement on “line walking” or “line paring” phenomena. The ultimate resolution is 60nm dense line. The focus latitude is around 0.1 to 0.15 um. We also used a 157-nm AIMS tool to check intensity balance. The results supports balanced intensity of this mask. For mask quality characterization, etch depth is measured by AFM and mask CD is measured by CD SEM. The uniformity of etching depth and mask CD are all within specifications. We also present some abnormal CD variation across line array observed during this investigation. The results from this work give a good groundwork of 157-nm capability of alternating PSM and 157-nm resist imaging quality.
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Yung-Tin Chen, Yung-Tin Chen, Jeff Meute, Jeff Meute, Kim R. Dean, Kim R. Dean, David R. Stark, David R. Stark, Christof M. Schilz, Christof M. Schilz, Wolfgang Dettmann, Wolfgang Dettmann, Roderick Koehle, Roderick Koehle, Bettina Schiessl, Bettina Schiessl, Wolfgang Degel, Wolfgang Degel, } "Image performance and mask characterization of 157-nm alternating phase-shifting mask", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485519; https://doi.org/10.1117/12.485519

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