Impact of scanner illumination mode on CD control process margin

Shangting F. Detweiler; Sandra Zheng; Mark A. Boehm

doi:10.1117/12.485429

26 June 2003 Impact of scanner illumination mode on CD control process margin

Shangting F. Detweiler, Sandra Zheng, Mark A. Boehm

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485429
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Conventional and annular illumination modes for a 248 nm DUV scanner will be discussed in this paper for their advantage and drawbacks in critical dimension (CD) control. This includes proximity of line width through pitch size, marginality of resist profile measured as sidewall angle, depth of focus (DOF) in line width variation across field/wafer, and isolated space resolution, supported by SEM and scatterometer metrology. Both illumination modes have been applied in the current technology node with sub-wavelength CD, variable pitch sizes, optical proximity correction (OPC) for resolution enhancement and process control optimization. Each illumination defines process margin in exposure, focus and CD uniformity, to gain capability with improved CD control.

Citation Download Citation

Shangting F. Detweiler, Sandra Zheng, and Mark A. Boehm "Impact of scanner illumination mode on CD control process margin", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485429

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