26 June 2003 Improved outline phase shifting mask (OL-PSM) for reduction of the mask error enhancement factor
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Abstract
We propose a new resolution enhancement technology (RET) for enhancing the resolution of contact hole patterns. The technology uses an attenuated mask with phase shifting aperture. The phase shifter is laid out based on the OL-PSM and CL-PSM algorithm. These RETs are called “Mask Enhancer”. Aerial images of random hole patterns are strongly enhanced by using the Mask Enhancer. We used the Mask Enhancer in 100-nm hole pattern fabrication in ArF lithography. The process window is strongly improved and the MEEF is drastically reduced compared to att-PSM.
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Akio Misaka, Takahiro Matsuo, Masaru Sasago, "Improved outline phase shifting mask (OL-PSM) for reduction of the mask error enhancement factor", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485319; https://doi.org/10.1117/12.485319
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