26 June 2003 Low-proximity contact hole formation by using double-exposure technology (DET)
Author Affiliations +
Proceedings Volume 5040, Optical Microlithography XVI; (2003); doi: 10.1117/12.485365
Event: Microlithography 2003, 2003, Santa Clara, California, United States
Abstract
As semiconductor technologies move toward 0.18um and below, it is difficult to get high pattern fidelity by 248-nm wavelength exposure. To reduce proximity effect, a lot of resolution enhancement technologies (RET) such as OPC, assistant feature, and double exposure technologies (DET) have been introduced. In this paper, random contact holes with low proximity effect were delivered by using 248-nm exposure tool in conjunction with double exposure technology. A low proximity resist patterns were formed by a well-designed Pack-mask. Then ion implantation treatment produced a solvent proof skin on the developed resist. The second lithography process was performed over the post-implanted resist layer. Resist coating as well as exposure perfectly transfer the patterns from Cover-mask. After etch, random holes with low proximity effect were easily achieved. In addition, higher energy association with higher dosages is able to maintain good critical dimension even if wafers went through three rework processes.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles Chang, Elvis Yang, Tzong-Shane Wu, Ta-Hung Yang, Calvin C. Hsueh, "Low-proximity contact hole formation by using double-exposure technology (DET)", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485365; https://doi.org/10.1117/12.485365
PROCEEDINGS
6 PAGES


SHARE
KEYWORDS
Argon

Etching

Photoresist processing

Photomasks

Resolution enhancement technologies

Ion implantation

Lithography

Back to Top