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26 June 2003 Next-generation scanner to sub-100-nm lithography
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The paper presents the Canon new scanner 6000 platform, incorporated in FPA-6000ES5 KrF scanner and FPA-6000AS4 ArF scanner, realizing both high productivity and high stage controllability for the sub 100nm lithography. We run aerial simulations and estimate process window criteria called CD-window to assess a focus budget and a CD budget meeting the requirement for CD uniformity at the MPU gate patterning in the 80 nm lithography node. The two budget are defined to be composed of image field deviation (IFD), dispersion of moving standard deviation (MSD) in scanning synchronization control, focusing accuracy, wafer chuck flatness, reticle flatness. These items are determined by experiments and the 6000 platform can be proven to be suitable for the 80 nm lithography node. Above all, reticle flatness is can be compensated adequately by the new focusing system and the real time z/tilt-image field curvature correcting system. Additionally, the result of overlay accuracy at the 6000 platform is also reported.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Itaru Fujita, Fumio M. Sakai, and Shigeyuki Uzawa "Next-generation scanner to sub-100-nm lithography", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003);

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