Novel strong-resolution enhancement technology with phase-shifting mask for logic gate pattern fabrication

Takahiro Matsuo; Akio Misaka; Masaru Sasago

doi:10.1117/12.485363

26 June 2003 Novel strong-resolution enhancement technology with phase-shifting mask for logic gate pattern fabrication

Takahiro Matsuo, Akio Misaka, Masaru Sasago

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485363
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

We propose the new phase-shifting mask named the centerline phase-shifting mask (CL-PSM; generically named “Mask Enhancer”). The minute phase-shifting aperture is disposed at the center of the opaque rim pattern on the mask to enhance the aerial image. The CL-PSM is able to maximize the aerial image contrast of the line patterns with any line width and any pitch by controlling the size of the phase-shifting aperture. We investigated the fundamental characteristics of the CL-PSM in KrF lithography. 70 nm line patterns with any pitch above 250 nm were successfully fabricated with a DOF of more than 300 nm. We studied the influence of various kinds of mask errors on the CD error, and we clarified that the influence of mask error is sufficiently small for practical use of the CL-PSM. The mask error enhancement factor is practically small for the opaque rim and phase-shifting aperture. A phase error of +/- 5 degrees does not reduce the process margin, and induces no CD variation. Furthermore, we demonstrated that the CL-PSM achieves a 65-nm random line pattern like a logic gate pattern in ArF lithography. The pattern fabrication by CL-PSM attains the required DOF of 300 nm for 65-nm node device fabrication. We confirmed that the “Mask Enhancer” has a resolution potential of 45-nm corresponding to a 1/4 wavelength.

Citation Download Citation

Takahiro Matsuo, Akio Misaka, and Masaru Sasago "Novel strong-resolution enhancement technology with phase-shifting mask for logic gate pattern fabrication", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485363

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available