26 June 2003 Optical lithography solutions for sub-65-nm semiconductor devices
Author Affiliations +
Abstract
In this paper we present a status update of the exposure tool developments for sub 65 nm CD’s. Main development path is 157-nm lithography. ASML follows a two step approach volume will be presented. Step 1 is based on the Micrascan step and scans platform and step 2 is based on the TWINSCAN platform. The progress of the development and first results on prototypes are discussed. This includes optics, purging, and pellicle status. The impact of CaF2 birefringence (intrinsic and stress induced) on lens performance is evaluated. Experimental data on optical path purging is presented. The pellicle status is reviewed, and results of hard pellicle testing in KrF scanners are presented. For the Micrascan system, first imaging and overlay results are presented.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Mulkens, James A. McClay, Bruce A. Tirri, Martin Brunotte, Birgit Mecking, Hans Jasper, "Optical lithography solutions for sub-65-nm semiconductor devices", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485382; https://doi.org/10.1117/12.485382
PROCEEDINGS
10 PAGES


SHARE
RELATED CONTENT

Study on overlay AEI ADI shift on contact layer of...
Proceedings of SPIE (March 08 2016)
Overlay considerations for 300-mm lithography
Proceedings of SPIE (June 02 2003)
Blossom overlay metrology implementation
Proceedings of SPIE (April 05 2007)
Double patterning for 32nm and below: an update
Proceedings of SPIE (March 18 2008)

Back to Top