Paper
26 June 2003 Optical rule checking for proximity-corrected mask shapes
Maharaj Mukherjee, Zachary Baum, John Nickel, Timothy G. Dunham
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Abstract
Optical Rule Checking (ORC) is an important vehicle to predict the failure of wafer shapes due to the process proximity effects. Optical Proximity Correction (OPC) if not aided by ORC may cause severe failures affecting the yield in manufacturing. However, it is fairly complicated to do ORC on mask shapes that are pre-corrected either by rules-based or by model-based OPC. ORC is also a good tool to capture the problems that may occur at multi-layer interactions. We present a methodology to use both geometric directives and limited optical simulation to detect potential failures using ORC. We extend our methodology to multi-layer interactions. In case of multi-layer ORC, we present several approaches that deal with how to judiciously mix the geometric directives and the optical simulations for different layers. We show the ORC can help us design better rules for OPC.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maharaj Mukherjee, Zachary Baum, John Nickel, and Timothy G. Dunham "Optical rule checking for proximity-corrected mask shapes", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485477
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CITATIONS
Cited by 8 scholarly publications.
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KEYWORDS
Optical proximity correction

Photomasks

Semiconducting wafers

Calibration

Image segmentation

Manufacturing

Optics manufacturing

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