26 June 2003 Practical resist model calibration
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Abstract
The lack of calibrated resist models has lead to a reliance on aerial images. This has limited capability of simulation to predict printed image shapes and CDs, especially in low K1 regimes. Calibration of resist models for matching simulation to pattern on wafers has always been a challenge due to various reasons. The primary problem is the large number of model parameters that need to be optimized. Another problem is the uncertainty associated with measurement of even the most basic parameters like thickness and refractive index. The amount of time and effort that is needed to calibrate the multitude of parameters is impractical in most situations. Some authors have taken the approach of optimizing a subset of parameters while retaining arbitrary default values for the rest. This leaves one wondering about the need for such models in process optimization and if a simpler empirical model would be sufficient. In this paper the various models are reviewed and the ones needing the smallest set of parameters are selected for calibration using a commercial resist modeling software package. The results of the calibration are checked against actual lithographic performance.
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Pary Baluswamy, Pary Baluswamy, Amy Weatherly, Amy Weatherly, Dave Kewley, Dave Kewley, Peter Brooker, Peter Brooker, Mike Pauzer, Mike Pauzer, } "Practical resist model calibration", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485339; https://doi.org/10.1117/12.485339
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