For the nanoline formation, pattern collapse and etch process are the serious topics. In this study, after the descriptions of the rinse, dry, and etch processes, the pattern collapse model of pressures as the modified mechanical method and the etch model are described for dense and isolated lines. Simulation results have good agreement with the experimental results. The sensitivity of simulation parameters for feature sizes is described and analyzed by using the response surface model and neural networks. The most effective processes of pattern collapse are quantitatively shown as the rinse and dry processes in the chemically-amplified resists.