Sub-100-nm DRAM cell patterning results and relation with lens aberration at 248-nm lithography era

Tae-Jun You; Hyeong-Soo Kim; Jin-Soo Kim; Seok-Kyun Kim; Young-Deuk Kim; Hyeong Sun Youn; Keun-Kyu Kong

doi:10.1117/12.485331

26 June 2003 Sub-100-nm DRAM cell patterning results and relation with lens aberration at 248-nm lithography era

Tae-Jun You, Hyeong-Soo Kim, Jin-Soo Kim, Seok-Kyun Kim, Young-Deuk Kim, Hyeong Sun Youn, Keun-Kyu Kong

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485331
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

248nm wave lithography process is being pushed and extended to sub 130nm node by continuous RET(Resolution Enhancement Technique) improvement. By applying various kind of RET such as exposure lens NA(Numerical Aperture) enlargement, more strong OAI(Off Axis Illumination), elaborated OPC(Optical Proximity Correction), and high performance resist, we still can’t give up for 248nm wave technology 130nm node and beyond. But there are some major challenges to reduce MEEF(Mask Error Effect Factor) and understand lens aberrations. This paper will try to find out mutual relationship between 248nm 0.8NA exposure lens aberration and actual patterns. Influence of lens aberration on patterning characteristic will be investigated by using in house simulation tool.

Citation Download Citation

Tae-Jun You, Hyeong-Soo Kim, Jin-Soo Kim, Seok-Kyun Kim, Young-Deuk Kim, Hyeong Sun Youn, and Keun-Kyu Kong "Sub-100-nm DRAM cell patterning results and relation with lens aberration at 248-nm lithography era", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485331

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