26 June 2003 Trends in systematic nonparticle yield loss mechanisms and the implications for IC design
Author Affiliations +
Abstract
Semiconductor industry yield trends from the 500 nm generation are described that illustrate traditional random defect yield loss mechanisms have been found to be less and less important relative to the yield loss caused by systematic and primarily non-particle mechanisms as semiconductor processes have moved to sub-wavelength lithography. While part of the reason for this is the continued particulate defect reduction success due to better equipment and fab procedures, a more important reason is the increase in systematic mechanisms driven in large part by the rapidly increasing process complexity and decreasing process parameter “windows” required as processes moved through the generations. In this paper these yield loss trends are reviewed and projected to the 130nm and beyond technology nodes, and the implications for effective IC design and design methodology discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Neil Berglund, C. Neil Berglund, } "Trends in systematic nonparticle yield loss mechanisms and the implications for IC design", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.497494; https://doi.org/10.1117/12.497494
PROCEEDINGS
9 PAGES


SHARE
RELATED CONTENT

Manufacturability of a 0.18-um OPC technology
Proceedings of SPIE (August 24 1999)
Designing to win in sub-90nm mask production
Proceedings of SPIE (November 07 2005)
Semiconductor foundry, lithography, and partners
Proceedings of SPIE (June 30 2002)
Mask design automation: an integrated approach
Proceedings of SPIE (November 07 2012)
Real-world impacts of inverse lithography technology
Proceedings of SPIE (November 05 2005)
Lithography yield check for IC design
Proceedings of SPIE (May 04 2005)

Back to Top