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26 June 2003 Ultra line-narrowed ArF excimer laser G42A for sub-90-nm lithography generation
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Abstract
193-nm lithography is going to move from pre-production phase to mass production phase and its target node become narrowing from 90 nm to 65 nm. In these situations, the laser manufacture needs to provide the high durable ArF excimer laser, which has superior spectrum performance. Gigaphoton has already introduced 4 kHz ArF laser (model G41A) to 193-nm lithography market, which produce 20 W and spectrum bandwidth of 0.35 pm (FWHM). G41A has showed high reliability and long lifetime over 5 billion pulses. In this paper, we report on the 4 kHz ArF excimer laser for mass production, model G42A, which has 20 W, spectral bandwidth less than 0.3 pm (FWHM) and a spectral purity less than 0.75 pm (E95).
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Saito, Toru Suzuki, Masaya Yoshino, Osamu Wakabayashi, Takashi Matsunaga, Junichi Fujimoto, Kouji Kakizaki, Taku Yamazaki, Toyoharu Inoue, Katsutomo Terashima, Tatsuo Enami, Hirotoshi Inoue, Akira Sumitani, Hitoshi Tomaru, and Hakaru Mizoguchi "Ultra line-narrowed ArF excimer laser G42A for sub-90-nm lithography generation", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485386
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