Lithography modeling is a very attractive way to predict the critical dimensions of patterned features after lithographic processing. In a previous paper, we have presented the assessment of three different simplified resist models (aerial image model, aerial image convolved with fixed gaussian noise and aerial image convolved with variable gaussian noise) by using a systematic comparison between experimental and simulated data. It has been shown that the aerial image convolved with fixed gaussian noise, or "diffused aerial image model" (DAIM), exhibits surprisingly good results of CD prediction for lines @ 193nm. Using these datasets, the DAIM appeared as an accurate model for CD prediction. This approach allows also an easy run, and because it needs only four adjustable parameters, it avoids the difficult task of resist parameters extraction associated to full resist models.
In this paper, we enlarge the datasets used for the assessment of the DAIM by considering both lines and contact holes of various sizes printed at different wavelengths. The reference wafers have been printed at 248nm, 193nm and 157 nm. The procedure used to extract the model parameters has been improved and now needs less data to provide acceptable values. We will show that the validity of the DAIM extends well outside the results presented in Ref. 1. Experimental data printed using various wavelengths, resists and exposure tools can be simulated accurately with CD prediction error ranging within few percents. It is to be noted that the results that will be presented on contact holes data indicate that the model is valid for 2D features. Finally, a comparison with full resist models shows that the accuracy of DAIM is comparable to more sophisticated and heavier models.