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Characterization and modeling of intradie variation and its applications to design for manufacturability
NBTI improvement for pMOS by Cl-contained 1st oxidation in 20A/65A dual-nitrided gate oxide of 0.13-μm CMOS technology
Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-μm CMOS technology
Modification of existing chip layout for yield and reliability improvement by computer-aided design tools