Improved manufacturability by OPC based on defocus data

Jorg Thiele; Ines Anke; Henning Haffner; Armin Semmler

doi:10.1117/12.485251

10 July 2003 Improved manufacturability by OPC based on defocus data

Jorg Thiele, Ines Anke, Henning Haffner, Armin Semmler

Proceedings Volume 5042, Design and Process Integration for Microelectronic Manufacturing; (2003) https://doi.org/10.1117/12.485251
Event: Advanced Microelectronic Manufacturing, 2003, Santa Clara, CA, United States

Abstract

The paper describes the advantages of optical proximity correction (OPC) based on defocus data instead of best focus data. By additionally acepting asymmetric variations of the dimension of different patterns e.g. for an isolated line that can become wider than its nominal width this method can deliver structures much more robust against opens and shorts than in the standard OPC approach which is based on data taken at best process conditions. The differences of both OPC methods are compared based on simulations and checked against experimental data of characteristic IC patterns.

Citation Download Citation

Jorg Thiele, Ines Anke, Henning Haffner, and Armin Semmler "Improved manufacturability by OPC based on defocus data", Proc. SPIE 5042, Design and Process Integration for Microelectronic Manufacturing, (10 July 2003); https://doi.org/10.1117/12.485251

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