10 July 2003 NBTI improvement for pMOS by Cl-contained 1st oxidation in 20A/65A dual-nitrided gate oxide of 0.13-μm CMOS technology
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Abstract
A new method is demonstrated in this paper for improving the NBTI lifetime on pMOS by >3X for I/O (65A) transistors and >2X for core (20A) transistors by using Chlorine (Cl) contained 1st gate oxidation in an advanced dual gate oxide 0.13um CMOS technology. The improvement appears related to the residual SiCl bonds on the surface of core and I/O transistor areas (from the Cl-contained 1st oxidation). The transistor beta (as measured by Idsat/(Vg-Vt)2 at saturation mode) is improved (~10%) on pMOS and degraded slightly (~3%) on nMOS as an evidence for supporting this mechanism.
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Ching-Chen Hao, Ching-Chen Hao, Min-Hwa Chi, Min-Hwa Chi, Chao-Chi Chen, Chao-Chi Chen, Hung-Jen Lin, Hung-Jen Lin, Yu-Fang Lin, Yu-Fang Lin, C. H. Hsieh, C. H. Hsieh, Chih-Hsiung Lee, Chih-Hsiung Lee, Kuang-Hui Chang, Kuang-Hui Chang, H. T. Wu, H. T. Wu, Chin-Heng Shen, Chin-Heng Shen, } "NBTI improvement for pMOS by Cl-contained 1st oxidation in 20A/65A dual-nitrided gate oxide of 0.13-μm CMOS technology", Proc. SPIE 5042, Design and Process Integration for Microelectronic Manufacturing, (10 July 2003); doi: 10.1117/12.485249; https://doi.org/10.1117/12.485249
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