22 July 2003 Nondestructive nanomechanical imaging: cross-sectional ultrasonic force microscopy of integrated circuit test structures
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Abstract
A novel cross-sectional characterization technique for nanomechanical profiling of low-k dielectrics has been developed based on ultrasonic force microscopy. So-called CS-UFM has been demonstrated on silicon-based, spin-on dielectrics (SOD) used for gap-fill in 0.15 μm trenches in an SiO2 integrated circuit test structure. The SiO2 trench walls were coated with a thin (~ 24 nm) plasma-enhanced, chemical vapor deposited (PECVD) silicon nitride layer. CS-UFM imaging clearly differentiated the SOD, SiO2 and silicon nitride on the basis of elastic modulus. Variations in the elastic uniformity of the SOD and silicon nitride were observed. In addition, mechanical defects were identified within the SOD-filled trenches.
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L. Muthuswami, Y. Zheng, Robert E. Geer, "Nondestructive nanomechanical imaging: cross-sectional ultrasonic force microscopy of integrated circuit test structures", Proc. SPIE 5045, Testing, Reliability, and Application of Micro- and Nano-Material Systems, (22 July 2003); doi: 10.1117/12.483994; https://doi.org/10.1117/12.483994
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