Paper
13 August 2003 Dependency of electric field and mechanical stress on piezoelectric strain of PZT 3203HD
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Abstract
In this paper, material nonlinear behavior of PZT wafer (3202HD, CTS) under high electric field and tensile stress is experimentally investigated and the nonlinearity of the PZT wafer is numerically simulated. In the simulation, new definitions of the piezoelectric constant and the incremental strain are proposed. Empirical functions that can represent the nonlinear behavior of the PZT wafer have been extracted based on the measured piezo-strain under stress. The functions are implemented in an incremental finite element formulation for material nonlinear analysis. With the new definition of the incremental piezo-strain, the measured nonlinear behavior of the PZT wafer has been accurately reproduced even for high electric field.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sung Hoon Jang, Young Sung Kim, Sang Ki Lee, Hoon Cheol Park, and Kwang Joon Yoon "Dependency of electric field and mechanical stress on piezoelectric strain of PZT 3203HD", Proc. SPIE 5053, Smart Structures and Materials 2003: Active Materials: Behavior and Mechanics, (13 August 2003); https://doi.org/10.1117/12.484202
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Cited by 3 scholarly publications.
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KEYWORDS
Ferroelectric materials

Semiconducting wafers

Finite element methods

Analytical research

Actuators

Computer simulations

Mechanics

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