9 April 2003 Crystallization of Ge-doped AgInTeSb phase-change optical disk media
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Proceedings Volume 5060, Sixth International Symposium on Optical Storage (ISOS 2002); (2003) https://doi.org/10.1117/12.510311
Event: Sixth International Symposium on Optical Storage (ISOS 2002), 2002, Wuhan, China
Abstract
Due to germanium doping in the AgInTeSb film, Ag2Te phase was formed at minor doping and disappeared when the germanium content was high, AgInTe2 phase changed into AgIn2 phase, and Ge2Sb2Te5 new crystalline phase appeared. The crystallization temperature of AgInTeSbGe increased manifestly with Ge addition. A doping amount of 4.1 at.% germanium increases the reflectivity contrast to be greater than 30% almost in the whole visible region.
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Bo Liu, Bo Liu, Hao Ruan, Hao Ruan, Fuxi Gan, Fuxi Gan, Jing Chen, Jing Chen, } "Crystallization of Ge-doped AgInTeSb phase-change optical disk media", Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); doi: 10.1117/12.510311; https://doi.org/10.1117/12.510311
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