9 April 2003 Effect of oxygen doping on the optical constants of Ge2Sb2Te5 phase-change thin films
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Proceedings Volume 5060, Sixth International Symposium on Optical Storage (ISOS 2002); (2003) https://doi.org/10.1117/12.510314
Event: Sixth International Symposium on Optical Storage (ISOS 2002), 2002, Wuhan, China
Abstract
Ge-Sb-Te phase change thin films are widely used as the recording media in rewritable optical storage. Doping of certain elements into Ge-Sb-Te films is an effective way to enhance their recording performance. In the present work effect of oxygen-doping on the optical constants of Ge-Sb-Te phase change thin films prepared by RF-sputtering were studied in the region of 400 to approximately 800 nm. The results show that the optical constants of the Ge-Sb-Te films change considerably with the doped oxygen content. With the increase in oxygen concentration, the extinction coefficients decrease monotonically. The calculated reflection spectra at normal incidence showed a good agreement with the measured values. With the optimal oxygen-doping, the reflectivity contrast between the crystalline and amorphous states of the Ge-Sb-Te films exceeds 30% throughout the whole visible region. The effect of the strain field induced by oxygen-doping on the optical properties is discussed.
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Sipeng Gu and Lisong Hou "Effect of oxygen doping on the optical constants of Ge2Sb2Te5 phase-change thin films", Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); doi: 10.1117/12.510314; https://doi.org/10.1117/12.510314
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