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16 July 2003 Preparation and electrical and optical properties of CuScO2: Mg (4.5%) films in quartz by rf sputtering
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Proceedings Volume 5061, International Symposium on Photonic Glass (ISPG 2002); (2003) https://doi.org/10.1117/12.517430
Event: International Symposium on Photonic Glass, 2002, Shanghai, China
Abstract
In this paper, the samples of transparent thin films have been prepared, using a 5.6 cm diameter target of CuScO2 doped with 4.5%(mole), on quartz glass substrates by rf sputtering at 120W. The substrates were heated at 450° C during sputtering. The samples were treated by rapidly thermal annealing (RTA) for 3 minutes at 950 °C in a argon flowing atmosphere, and then the RTA samples were treated at 500° C under oxygen atmosphere at pressures ranging from 1 to 7 atm. in order to intercalate oxygen into the center of Cu triangles in the triangular Cu plane of delafossite structure. XRD, UV/VIS and XPS have been used to characterize the samples. The results showed that the structures of all the films were amorphous, the transmittance (%) of the samples in the visible region of the spectrum decreased with the increase of the oxygen stoichiometry in the films, but the conductivity increased, the Seebeck coefficient was found to be positive and varied from 378uV/K to 42uV/K, which means that the conductive samples were p-type. The results stated above were discussed.
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Qingnan Zhao, Xiujian Zhao, A. W. Sleight, and Jun Li "Preparation and electrical and optical properties of CuScO2: Mg (4.5%) films in quartz by rf sputtering", Proc. SPIE 5061, International Symposium on Photonic Glass (ISPG 2002), (16 July 2003); https://doi.org/10.1117/12.517430
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