14 October 2003 H2S sensors based on chemically treated SnO2:Pd thin films
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Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514828
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India
Abstract
Preparation and characterization of gas sensors based on thin films of SnO2:Pd to monitor trace amounts of H2S in air are reported. Sensors have been exposed to 100% relative humidity to study the incorporation of hydroxyl group (-OH) in the film and its effects on gas sensing properties. Films have been subsequently treated with dilute sulphuric acid and characterized using different techniques such as X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, IR spectroscopy and electrical resistance measurements. IR studies reveal the presence of two types of hydroxyl groups (-OH) in the film; as 'free surface -OH' and hydrogen bonded -OH. The two types of -OH have been found to affect the gas sensing properties in different ways. Chemical treatment of films with dilute sulphuric acid has been found to improve the H2S sensing properties of the sensor by modifying the concentrations of the two types of hydroxyl groups.
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V. R. Katti, Manmeet Kaur, K. P. Muthe, A. K. Dua, S. C. Gadkari, S. K. Gupta, Vinod C. Sahni, "H2S sensors based on chemically treated SnO2:Pd thin films", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); doi: 10.1117/12.514828; https://doi.org/10.1117/12.514828
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