14 October 2003 Integrated Ba(Sn,Ti)O3 films for microactuator applications
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Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514577
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India
Abstract
Polycrystalline thin films of Ba(Sn0.1Ti0.9)O3 were deposited on pt coated silicon substrates by pulsed excimer laser ablation technique. The room temperature dielectric constant of the Ba(Sn0.1Ti0.9)O3 films was 350 at a frequency of 100 kHz. The films showed a slightly diffused phase transition in the range of 275-340 K. The polarization hysteresis behavior confirmed the ferroelectric nature of the thin films. Remanent polarization (Pr) and saturation polarization (Ps) were 1.1. μC/cm2 and 3.2μC/cm2 respectively. The asymmetric capacitance-voltage curve for Ba(Sn0.1Ti0.9)O3 was attributed to the difference in the nature of the electrodes. Dispersion in both the real (εr') and imaginary (εr") parts of the dielectric constant at low frequencies with increase in temperature was attributed to space charge contribution in the complex dielectric constant.
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Sandip Halder, Saluru B. Krupanidhi, "Integrated Ba(Sn,Ti)O3 films for microactuator applications", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); doi: 10.1117/12.514577; https://doi.org/10.1117/12.514577
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