14 October 2003 Light emission from rare-earth-implanted GaN expected for full-color display
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Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514829
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India
Abstract
Rare-Earth (RE) was implanted to GaN epitaxial layer. Eu-implanted GaN films were annealed at the temperature range of 950 - 1100°C to reduce the implantation damages. Photoluminescence (PL) properties were measured, and strong emission at 621 nm corresponding to the transition from 5D0 to 7F2 states of Eu3+ was observed. The thermal quenching of PL intensity was very small and the peak position was not shifted. Large hardness for high energy electron-induced damages was observed.
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Akira Yoshida, Akira Yoshida, Y. Nakanishi, Y. Nakanishi, Akihiro Wakahara, Akihiro Wakahara, } "Light emission from rare-earth-implanted GaN expected for full-color display", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); doi: 10.1117/12.514829; https://doi.org/10.1117/12.514829
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