14 October 2003 Room-temperature IR detection using pulsed laser deposited vanadium oxide bolometer
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Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514563
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India
We report the design, fabrication and performance of the 5 x 2 pixel uncooled microbolometer array. The test microbolometer utilizes pulsed laser deposited vanadium oxide film at room temperature as the IR sensitive layer. The microbolometer was fabricated without air-gap thermal isolation structure and the pixel area of about 200 x 800 μm2. The observed change in bolometer resistance with respect to temperature (dR/dT) as high as 9.3 x 103 Ω/°C and temperature coefficient of resistance (TCR) of about 5%/°C at room temperature, implies an excellent bolometric response. The room temperature deposition of the IR sensing layer facilitates their integration with the existing complementary metal-oxide-semiconductor (CMOS) technology for better signal processing. IR response of the device was evaluated in the spectral region 8 - 15 μm. The preliminary IR characterization revealed that the test microbolometer exhibits responsivity (Rv) and detectivity (D*) approximately as 36 V/W and 6 x 105 cm2Hz1/2/W at chopper frequency of 10 Hz for 50 μA bias current. Provided with the air-gap thermal isolation structure, the microbolometer will exhibit responsivity (Rv) over 1.2 x 104 V/W, which compares well with the reported values.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. T. Rajendra Kumar, R. T. Rajendra Kumar, B. Karunagaran, B. Karunagaran, D. Mangalaraj, D. Mangalaraj, Sa. K. Narayandass, Sa. K. Narayandass, P. Manoravi, P. Manoravi, M. Joseph, M. Joseph, Vishnu Gopal, Vishnu Gopal, } "Room-temperature IR detection using pulsed laser deposited vanadium oxide bolometer", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); doi: 10.1117/12.514563; https://doi.org/10.1117/12.514563

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