Paper
14 October 2003 Smart chip with selective micro-probes on Si(111) IC chips for detecting nerve potential
Makoto Ishida, Takeshi Kawano, Hidekuni Takao, Kazuaki Sawada
Author Affiliations +
Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514765
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India
Abstract
A large number of single crystal Si micro-probes on Si(111) were fabricated selectively using VLS (Vapor-Liquid-Solid) growth method after IC process. The Si probes can be grown with a high aspect ratio more than a few hundreds. A diameter of the probes can be controlled from sub-micron to a few hundred microns. The Si probe position on the chip is also controlled and the chip with IC circuits can work even after the Si probe growth. Conductivity of the Si probes was controlled by using phosphorous diffusion, resulting in a resistivity of 10-2 Ω•cm from 104 Ω•cm for a diffusion temperature of 1100°C. In in-vivo studies, penetrating micro-probe array of low impedance such as the VLS growth Si probes has been desired, therefore electrical and mechanical properties were studied detected successfully.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Ishida, Takeshi Kawano, Hidekuni Takao, and Kazuaki Sawada "Smart chip with selective micro-probes on Si(111) IC chips for detecting nerve potential", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); https://doi.org/10.1117/12.514765
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KEYWORDS
Silicon

Gold

Molybdenum

Diffusion

Amplifiers

Semiconducting wafers

Field effect transistors

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