14 October 2003 Study on hot-wall-epitaxy-grown 9,10-anthraquinone films
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Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514848
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India
9,10-Anthraquinone films have been prepared by hot wall epitaxy technique onto the glass substrate kept at different temperatures in a vacuum of 10-5 Torr. The experimental conditions are optimized to obtain better crystallinity of the films. The films so prepared have been studied for their structural, optical and electrical properties. The IR and NMR studies confirmed the formation of 9,10-anthraquinone films. Crystallites as large as 0.61 μm are observed in the case of films deposited at 348 K. Observations reveal that the crystallinity of the films increases with increase in substrate temperature. The conduction in these films is found to be ohmic in nature and appears to take place by thermally activated hopping above intermolecular barriers. The electrical conductivity, carrier concentration and drift mobility of the films increase with increases in substrate temperature, whereas activation energy decreases. Analysis of optical absorption measurements on the films indicates that the interband transition energies lie in the range 3.16 - 3.44 eV.
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Aman Mahajan, Aman Mahajan, R. K. Bedi, R. K. Bedi, } "Study on hot-wall-epitaxy-grown 9,10-anthraquinone films", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); doi: 10.1117/12.514848; https://doi.org/10.1117/12.514848

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