18 November 2003 Ablation process induced by femtosecond laser in transparent dielectrics
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Proceedings Volume 5063, Fourth International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.540643
Event: Fourth International Symposium on Laser Precision Microfabrication, 2003, Munich, Germany
Abstract
The ablation process in sapphire and fused silica are studied with laser at 800 nm and 400 nm respectively. Comparing with the features of the ablated craters induced by different laser, we find that lasers with short wavelength and pulse duration can produce more exquisite ablation crater with small area and steep gradient. By means of determining the Fth with detection of the scattered light, the developments of the threshold fluence of dielectrics as a function of pulse duration are presented. While interpreting our results with existent model of optical breakdown, we discuss the excitation mechanism of conduction band electrons (CBE) in transparent dielectrics.
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Xiaoxi Li, Xiaoxi Li, Tianqin Jia, Tianqin Jia, Donghai Feng, Donghai Feng, Zhizhan Xu, Zhizhan Xu, "Ablation process induced by femtosecond laser in transparent dielectrics", Proc. SPIE 5063, Fourth International Symposium on Laser Precision Microfabrication, (18 November 2003); doi: 10.1117/12.540643; https://doi.org/10.1117/12.540643
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