Laser etching of indium tin oxide thin films by ultra-short pulsed laser

Ryuzo Tanaka; T. Takaoka; H. Mizukami; T. Arai; Y. Iwai

doi:10.1117/12.540533

18 November 2003 Laser etching of indium tin oxide thin films by ultra-short pulsed laser

Ryuzo Tanaka, T. Takaoka, H. Mizukami, T. Arai, Y. Iwai

Proceedings Volume 5063, Fourth International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.540533
Event: Fourth International Symposium on Laser Precision Microfabrication, 2003, Munich, Germany

Abstract

We have investigated laser etching that removed ITO (Indium Tin Oxide) thin films deposited on glass substrate directly and selectively by laser beam in dry process. At first, in order to examine the dependence of laser wavelengths at ablation, the first, second, third and fourth harmonic of nanosecond pulsed Nd:YLF laser were employed respectively. As a result, comparatively good etching was performed by the UV wavelength. In the line patterning of ITO, however, molten materials were observed around the edge of the pattern. Moreover, a few micro cracks occurred in the molten domain. In this research, therefore, we carried out laser etching by ultra-short pulsed laser (wavelength: λ = 800 nm, pulse duration: 30 fs) to solve these heat influence problems. The line patterning of ITO (film thickess: 330 nm) was performed by control of laser fluence at fixed laser power and feed rate. In conclusion, we achieved good laser etching that the molten materials and the micro cracks were reduced and there were little debris near the groove, even processing in the atmosphere. Additionally, the removal of ITO was more efficiency as compared with nanosecond-laser so that effects of plasma shielding were lower at ablation.

Citation Download Citation

Ryuzo Tanaka, T. Takaoka, H. Mizukami, T. Arai, and Y. Iwai "Laser etching of indium tin oxide thin films by ultra-short pulsed laser", Proc. SPIE 5063, Fourth International Symposium on Laser Precision Microfabrication, (18 November 2003); https://doi.org/10.1117/12.540533

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