1 April 2003 Effects of stress annealing on the index of refraction of SiO2 layers in MOS devices
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Abstract
In this paper we present the results of a study of the effect of high-temperature stress annealing in nitrogen on the index of refraction of SiO2 layers in MOS (metal/oxide/semiconductor) devices. The dependence of mechanical stress in the Si-SiO2 system on the annealing conditions has been experimentally characterized. Subsequently, we have correlated such properties with the dependence of the index of refraction on processing conditions and oxide thickness.
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Witold Rzodkiewicz, Witold Rzodkiewicz, Henryk M. Przewlocki, Henryk M. Przewlocki, "Effects of stress annealing on the index of refraction of SiO2 layers in MOS devices", Proc. SPIE 5064, Lightmetry 2002: Metrology and Testing Techniques Using Light, (1 April 2003); doi: 10.1117/12.501538; https://doi.org/10.1117/12.501538
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