14 April 2003 Chemical dissolution of gallium antimonide in the HNO3-HCl-CH3COOH solutions
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Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502294
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
The nature of GaSb dissolution in the mixtures of HNO3-HCl-CH3COOH system in reproducible hydrodynamics conditions has been investigated. The main regularities of chemical etching and polishing of GaSb, Sb and Ga were determined and surfaces of equal etching rates (Gibbs diagrams) were built. The potentials of self-dissolutions of indicated materials in the investigated solutions were studied also. Region of polishing solutions was defined and etchant compositions for chemical dynamic polishing of GaSb were optimized.
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O. S. Chernyuk, O. S. Chernyuk, V. N. Tomashik, V. N. Tomashik, V. I. Grytsiv, V. I. Grytsiv, Z. F. Tomashik, Z. F. Tomashik, V. M. Kashpor, V. M. Kashpor, } "Chemical dissolution of gallium antimonide in the HNO3-HCl-CH3COOH solutions", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502294; https://doi.org/10.1117/12.502294
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