14 April 2003 Chemical etching of CdTe and CdxHg1-xTe in the H2O2-HJ-tartaric acid solutions
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Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502293
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
Kinetics of physico-chemical interaction of CdTe and CdxHg1-xTe solid solutions in the H2O2-HI-tartaric acid solutions in reproducible hydrodynamics conditions has been investigated. The main regularities of chemical etching and polishing of these semiconductor materials were determined and surfaces of equal etching rates (Gibbs diagrams) were built. Regions of polishing and unpolishing solutions were defined and etchant compositions for chemical dynamic polishing of CdTe and CdxHg1-xTe solid solutions and etching conditions were optimized.
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Z. F. Tomashik, Z. F. Tomashik, O. R. Gumenyuk, O. R. Gumenyuk, V. N. Tomashik, V. N. Tomashik, } "Chemical etching of CdTe and CdxHg1-xTe in the H2O2-HJ-tartaric acid solutions", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502293; https://doi.org/10.1117/12.502293
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