Electrical and optical properties of indium antimonide doped by cadmium and tellurium

Alexander V. Brodovoi; P. V. Pleskatch; S. G. Bunchuk; Oleg S. Zinets; V. A. Brodovoi

doi:10.1117/12.502194

14 April 2003 Electrical and optical properties of indium antimonide doped by cadmium and tellurium

Alexander V. Brodovoi, P. V. Pleskatch, S. G. Bunchuk, Oleg S. Zinets, V. A. Brodovoi

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502194
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

In the present work indium antimonide crystals doped by cadmium and tellurium in equiatomic quantities have been studied. It was shown that (InSb)_1-x(CdTe)_x solid solutions with the mole concentration x ≤ 0.05 arises. Two maxima at x = 0.0025 and x = 0.02 - 0.03 and a minimum at x = 0.01 were found out in the dependence of the lattice constant on the composition x. It is shown that the change in the energy gap ΔE is proportional to the change in the lattice constant Δa. Dependencies of the effective electron mass, the electron density and the mobility on the composition x and temperature were studied. Minimal values of the effective electron mass and the energy gap were observed in the composition range x = 0.02 - 0.03 and were as follows m_eff = 0.009 m_o and E_g = 0.07 eV (m_o is the free electron mass). Anomalous (as large as tenfold) increase of diamagnetism was found out in the temperature dependence of the magnetic susceptibility of the solid solution with x = 0.05 in the range 4.2 K < T < 30 K.

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Alexander V. Brodovoi, P. V. Pleskatch, S. G. Bunchuk, Oleg S. Zinets, and V. A. Brodovoi "Electrical and optical properties of indium antimonide doped by cadmium and tellurium", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502194

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