Electrical properties of HgMnTe Schottky diodes

Leonid A. Kosyachenko; Sergey E. Ostapov; Andrey V. Markov; Ilary M. Rarenko; Valery M. Sklyarchuk; Ye. F. Sklyarchuk

doi:10.1117/12.502192

14 April 2003 Electrical properties of HgMnTe Schottky diodes

Leonid A. Kosyachenko, Sergey E. Ostapov, Andrey V. Markov, Ilary M. Rarenko, Valery M. Sklyarchuk, Ye. F. Sklyarchuk

Author Affiliations +

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502192
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

The electrical properties of Al-Hg_1-xMn_xTe (x = 0.08 - 0.1) Schottky barriers are investigated. The main parameters of the diode structure and charge transport mechanisms responsible for their characteristics, tunneling and over-barrier passage of carriers, are determined. The features of the diode electrical characteristics caused by the narrow bandgap and big difference between effective masses of carriers are revealed. The results obtained experimentally and theoretically testify of the high detectivity of the diodes studied.

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Leonid A. Kosyachenko, Sergey E. Ostapov, Andrey V. Markov, Ilary M. Rarenko, Valery M. Sklyarchuk, and Ye. F. Sklyarchuk "Electrical properties of HgMnTe Schottky diodes", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502192

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