14 April 2003 Formation of low-density InAs/InP(001) quantum dot arrays
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Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502288
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
Carrier transfer in low-density InAs/InP dot arrays with a multi-modal dot size distribution is studied by means of steady-state photoluminescence. The transition from saturation of the inter-dot carrier transfer to the unsaturated regime is surely observed by analyzing the shape of the luminescence signal for decreasing excitation densities. We unambiguously show that larger size dots provide a competing but saturable relaxation channel for smaller quantum dot ground states.
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Yuri I. Mazur, Yuri I. Mazur, Heiko Kissel, Heiko Kissel, Haeyeon Yang, Haeyeon Yang, Gregory J. Salamo, Gregory J. Salamo, Min Xiao, Min Xiao, } "Formation of low-density InAs/InP(001) quantum dot arrays", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502288; https://doi.org/10.1117/12.502288
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