IR photodetectors on CdSb, In4Se3, In4Te3-epitaxial barrier structures

B. M. Gritsyuk; O. V. Galochkin; A. I. Rarenko; V. N. Strebezhev

doi:10.1117/12.502189

14 April 2003 IR photodetectors on CdSb, In₄Se₃, In₄Te₃-epitaxial barrier structures

B. M. Gritsyuk, O. V. Galochkin, A. I. Rarenko, V. N. Strebezhev

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502189
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

Perfect homo- and heteroepitaxial structures of n- and p-type conductivity on CdSb, In₄Se₃, In₄Te₃ semiconductors and their solid solutions were grown. On formed p-n-junctions there were investigated spectral dependence of photo-emf and detectivity in λ = 1 - 3 μm interval. It is shown the possibility of their using as IR-photodetectors.

Citation Download Citation

B. M. Gritsyuk, O. V. Galochkin, A. I. Rarenko, and V. N. Strebezhev "IR photodetectors on CdSb, In₄Se₃, In₄Te₃-epitaxial barrier structures", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502189

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available