14 April 2003 IR photodetectors on CdSb, In4Se3, In4Te3-epitaxial barrier structures
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Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502189
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
Perfect homo- and heteroepitaxial structures of n- and p-type conductivity on CdSb, In4Se3, In4Te3 semiconductors and their solid solutions were grown. On formed p-n-junctions there were investigated spectral dependence of photo-emf and detectivity in λ = 1 - 3 μm interval. It is shown the possibility of their using as IR-photodetectors.
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B. M. Gritsyuk, B. M. Gritsyuk, O. V. Galochkin, O. V. Galochkin, A. I. Rarenko, A. I. Rarenko, V. N. Strebezhev, V. N. Strebezhev, } "IR photodetectors on CdSb, In4Se3, In4Te3-epitaxial barrier structures", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502189; https://doi.org/10.1117/12.502189
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