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14 April 2003 Influence of the electrochemical process of the macroporous silicon fabrication on surface local chemical states
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Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502274
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
Local chemical states and structure of microporous layers on macropore walls were investigated before and after KOH etching using Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy. Micropore layers of the thickness 100 - 700 nm were formed on macropore walls of two-dimensional silicon structures. Higher current densities gave the thinner microporous. FTIR spectroscopy results showed content strong peak 465 cm-1 attributed to SiO2 structures and Si-Si peak 650 cm-1 observed due to high porosity and big total surface of microporous layers. After KOH etching Si-O peak is presented in FTIR spectra of all investigated structures. Macroporous silicon structures fabricated at low initial bias U0 less of 1-st peak in I-V characteristic after KOH etching content mainly OH, Si-O and Si-Si peaks.
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Oleq O. Lytvynenko, Lyudmila A. Karachevtseva, Elza A. Malovichko, O. I. Stronska, and M. I. Karas "Influence of the electrochemical process of the macroporous silicon fabrication on surface local chemical states", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502274
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