14 April 2003 Schottky photodiode arrays on the basis of n-Pb1-xSnxTe1-ySey epitaxial layers, lattice-matched with {100}KCl substrates
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Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502295
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
The linear photovoltaic infrared sensor arrays have been formed on the basis of high-quality epitaxial layers of Pb1-xSnxTe1-ySey quaternary solid solutions, lattice matched with {100}KCl substrates, by the thermal vacuum deposition technique. Epilayers were grown from bounded volume of (Pb1-vSnv)1-w(Te1-uSeu)w melt-solutions by the liquid phase epitaxy technique at the liquidus temperature of 773 ÷ 873 K. The obtained 2 x 5-element matrix of the infrared photodiodes with the Au/δ-layer/n-Pb0.83Sn0.17Te0.79Se0.21 Schottky barrier at the 170 K, peak wavelength λp approximately 8.2 μm and cutoff wavelength λc approximately 8.8 μm had the zero bias resistance area product R0A=0.09 ÷ 0.22 Ω•cm2, peak quantum efficiency ηλ = 0.34 ÷ 0.45 and peak detectivity * = (0.6 ÷ 1.3)x1010 cm•Hz1/2•W-1.
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O. N. Tsarenko, O. N. Tsarenko, A. I. Tkachuk, A. I. Tkachuk, S. I. Ryabets, S. I. Ryabets, } "Schottky photodiode arrays on the basis of n-Pb1-xSnxTe1-ySey epitaxial layers, lattice-matched with {100}KCl substrates", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502295; https://doi.org/10.1117/12.502295
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