Schottky photodiode arrays on the basis of n-Pb1-xSnxTe1-ySey epitaxial layers, lattice-matched with {100}KCl substrates

O. N. Tsarenko; A. I. Tkachuk; S. I. Ryabets

doi:10.1117/12.502295

14 April 2003 Schottky photodiode arrays on the basis of n-Pb_1-xSn_xTe_1-ySe_y epitaxial layers, lattice-matched with {100}KCl substrates

O. N. Tsarenko, A. I. Tkachuk, S. I. Ryabets

Author Affiliations +

Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502295
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine

Abstract

The linear photovoltaic infrared sensor arrays have been formed on the basis of high-quality epitaxial layers of Pb_1-xSn_xTe_1-ySe_y quaternary solid solutions, lattice matched with {100}KCl substrates, by the thermal vacuum deposition technique. Epilayers were grown from bounded volume of (Pb_1-vSn_v)_1-w(Te_1-uSe_u)_w melt-solutions by the liquid phase epitaxy technique at the liquidus temperature of 773 ÷ 873 K. The obtained 2 x 5-element matrix of the infrared photodiodes with the Au/δ-layer/n-Pb_0.83Sn_0.17Te_0.79Se_0.21 Schottky barrier at the 170 K, peak wavelength λ_p approximately 8.2 μm and cutoff wavelength λ_c approximately 8.8 μm had the zero bias resistance area product R₀A=0.09 ÷ 0.22 Ω•cm², peak quantum efficiency η_λ = 0.34 ÷ 0.45 and peak detectivity Dλ* = (0.6 ÷ 1.3)x10¹⁰ cm•Hz^1/2•W^-1.

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O. N. Tsarenko, A. I. Tkachuk, and S. I. Ryabets "Schottky photodiode arrays on the basis of n-Pb_1-xSn_xTe_1-ySe_y epitaxial layers, lattice-matched with {100}KCl substrates", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502295

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