14 April 2003 SiOx (Fe) thin films as material for uncooled microbolometer
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Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502296
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
Composite metal-dielectric SiOx -Fe- films with concentration of metal varied on thickness in dielectric matrix SiOx are investigated. The reflectance and transmittance of the samples at normal incidence were measured in the 2 - 12 microns wavelength range. In the wavelength range of 2 - 8,5 microns absorption of the films is about 90%, in more long-wavelength area 8,5 - 12 microns absorption is equal 70 - 80%. The optical properties of these gradient layers are simulated, and the results of simulation are compared with experimental data. In a range of temperatures 283 - 390 K thermosensitive properties of SiOx -Fe- films are investigated and values of temperature coefficient of resistance is determined. These coatings can be used as a sensitive layer of uncooled microbolometers.
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K. Michailovskaya, Ivan Z. Indutnyy, Peter E. Shepeliavy, "SiOx (Fe) thin films as material for uncooled microbolometer", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502296; https://doi.org/10.1117/12.502296
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