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14 April 2003 Spatially nanostructured silicon for optical applications
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Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502162
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
We report on a strong intrinsic optical anisotropy of silicon induced by its dielectric nanopatterning. As a result, an in-plane birefringence for nanostructured (110) Si surfaces is found to be 105 times stronger than that observed in bulk silicon crystals. A difference in the main values of the anisotropic refractive index exceeds that one of any natural birefringent crystals. The anisotropy parameters are found to be strongly dependent on the typical size of the silicon nanowires assembling the layers. The value of birefringence is dependent also on the dielectric surrounding of silicon nanoparticles assembling these layers. We show that stacks of layers having alternative refractive indices act as a distributed Bragg reflectors or optical microcavities. Dichroic reflection/transmission behavior of these structures sensitive to the polarization of the incident linearly polarized light is demonstrated. These findings open the possibility of an application of optical devices based on birefringent silicon layers in a wide spectral range.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitri I. Kovalev, Joachim Diener, Nicolai Kuenzner, Egon Gross, Gennadi Polisski, Frederick Koch, Viktor Yu. Timoshenko, and Minoru Fujii "Spatially nanostructured silicon for optical applications", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); https://doi.org/10.1117/12.502162
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