14 April 2003 Threshold characteristics of p-Si-PtSi barriers with highly-doped surface nanolayer
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Proceedings Volume 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2003) https://doi.org/10.1117/12.502186
Event: Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2002, Kiev, Ukraine
Abstract
Platinum silicide Schottky barrier detectors are widely used for application in the medium infrared wavelength region. The increase of cutoff wavelength and responsivity of PtSi-Si photodevices is possible by formation of highly-doped thin layer near to the semiconductor surface. We propose for this aim to form highly-doped nanolayer in p-Si by recoil implantation of boron. It is experimental established that profile of impirity distribution in surface layer is exponential. The doping concentration at the silicide/silicon interface is 1018 - 1020 cm-3 and thickness of surface layer is 8 - 12 nm. We have calculated the spectral, threshold, and noise characteristics of p-Si-PtSi photodetectors with highly-doped surface layers produced by molecular-beam epitaxy and short-pulse dopant implantation by a recoil method.
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Sergey N. Nesmelov, Aleksander V. Voitsekhovskii, Andrej P. Kokhanenko, "Threshold characteristics of p-Si-PtSi barriers with highly-doped surface nanolayer", Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502186; https://doi.org/10.1117/12.502186
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