16 September 2003 The study of crystallization process of as-deposited amorphous phase change-materials by in situ annealing experiments
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Proceedings Volume 5069, Optical Data Storage 2003; (2003) https://doi.org/10.1117/12.532407
Event: Optical Data Storage 2003, 2003, Vancouver, Canada
Abstract
The crystallization process of two types of phase change materials (Ge2Sb2Te5 and AgInSbTe) has been studied by in-situ annealing experiments in the column of a transmission electron microscope. Under the same heating rate (7.5K/s), the Ge2Sb2Te5 material starts to nucleate at 170°C, while AgInSbTe starts to nucleate at 250°C. The measured nucleation rate of Ge2Sb2Te5 is 8.2×1014 cm-3s-1 larger than nucleation is dominant for both Ge2Sb2Te5 and AgInSbTe with ZnS-SiO2 as the dielectric layer in the thinned samples.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhaohui Fan, Zhaohui Fan, Lisha Wang, Lisha Wang, Yingguo Peng, Yingguo Peng, Noel T. Nuhfer, Noel T. Nuhfer, David E. Laughlin, David E. Laughlin, U. Rambabu, U. Rambabu, Han-Ping D. Shieh, Han-Ping D. Shieh, } "The study of crystallization process of as-deposited amorphous phase change-materials by in situ annealing experiments", Proc. SPIE 5069, Optical Data Storage 2003, (16 September 2003); doi: 10.1117/12.532407; https://doi.org/10.1117/12.532407
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