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16 September 2003 The study of crystallization process of as-deposited amorphous phase change-materials by in situ annealing experiments
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Proceedings Volume 5069, Optical Data Storage 2003; (2003) https://doi.org/10.1117/12.532407
Event: Optical Data Storage 2003, 2003, Vancouver, Canada
Abstract
The crystallization process of two types of phase change materials (Ge2Sb2Te5 and AgInSbTe) has been studied by in-situ annealing experiments in the column of a transmission electron microscope. Under the same heating rate (7.5K/s), the Ge2Sb2Te5 material starts to nucleate at 170°C, while AgInSbTe starts to nucleate at 250°C. The measured nucleation rate of Ge2Sb2Te5 is 8.2×1014 cm-3s-1 larger than nucleation is dominant for both Ge2Sb2Te5 and AgInSbTe with ZnS-SiO2 as the dielectric layer in the thinned samples.
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Zhaohui Fan, Lisha Wang, Yingguo Peng, Noel T. Nuhfer, David E. Laughlin, U. Rambabu, and Han-Ping D. Shieh "The study of crystallization process of as-deposited amorphous phase change-materials by in situ annealing experiments", Proc. SPIE 5069, Optical Data Storage 2003, (16 September 2003); https://doi.org/10.1117/12.532407
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