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10 October 2003 Advanced HgCdTe focal plane arrays
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Abstract
Boron implantation and heterojunction epitaxy have been the standard techniques for the production of HgCdTe focal plane arrays for a variety of applications. Each of these techniques has its special advantageous features. In this paper, we will describe an advanced HgCdTe junction formation technique, the planar ion-implantation-isolated heterojunction process, which utilizes the benefits of both the boron implantation and the heterojunction epitaxy techniques. HgCdTe arrays in the format of 320x256 and 640x512 have been produced by this method. The characteristics of these arrays are reported.
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Muren Chu, Hrayr K. Gurgenian, Shoghig Mesropian, Sevag Terterian, C.C. Wang, J. D. Benson, Jack H. Dinan, and Latika S. R. Becker "Advanced HgCdTe focal plane arrays", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); https://doi.org/10.1117/12.485908
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