Paper
10 October 2003 An In0.6Ga0.4As/GaAs quantum dot infrared photodetector with operating temperature up to 260K
Lin Jiang, Sheng S. Li, Nien-Tze Yeh, Jen-Inn Chyi
Author Affiliations +
Abstract
A high-sensitivity In0.6Ga0.4As/GaAs quantum-dot infrared photodetector (QDIP) with detection waveband in 6.7 to approximately 11.5 μm and operating temperature up to 260K under normal incident illumination has been demonstrated. The peak detection wavelength shifts from 7.6 μm to 8.4 μm when the temperature rises from 40 to 260K. The background limited performance (BLIP) detectivity (D*BLIP) measured at Vb=1.5 V, T=77K and λp = 7.6 μm was found to be 1.25 x 1010 cm-Hz1/2/W, with a corresponding responsivity of 0.22A/W. The high operating temperature is attributed to the very low dark current and long carrier lifetime in the quantum dots of this device. The results show that this QDIP can operate at high temperature without using the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current.
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Lin Jiang, Sheng S. Li, Nien-Tze Yeh, and Jen-Inn Chyi "An In0.6Ga0.4As/GaAs quantum dot infrared photodetector with operating temperature up to 260K", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); https://doi.org/10.1117/12.487034
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KEYWORDS
Electrons

Photodetectors

Infrared radiation

Quantum well infrared photodetectors

Gallium arsenide

Quantum dots

Infrared photography

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