10 October 2003 Bias-controlled NIR/LWIR QWIP-based structure for night vision and see spot
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Abstract
A novel integrated two terminal structure of Quantum Well Infrared Photodetector (QWIP) with bias controlled dual-band detection at the long wavelength infrared (LWIR) and near infrared (NIR) atmospheric windows is demonstrated. The LWIR sensor is based on a GaAs/AlGaAs standard QWIP, while the NIR sensor is based on a strained InGaAs/GaAs quantum wells structure. The InGaAs/GaAs quantum wells are embedded in a heterostructure bipolar transistor (HBT) structure, which enables high gain and rapid switching capabilities between the two spectral bands. The GaAs/AlGaAs and InGaAs/GaAs monolithic structure allows fabrication of large focal plane array (FPA) that can be operated using a standard two-terminal readout circuit (ROIC). Such FPA configuration allows simultaneous imaging of a NIR laser spot superimposed on a thermal imaging scene.
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Noam Cohen, Noam Cohen, Gabby Sarusi, Gabby Sarusi, G. Mizrachi, G. Mizrachi, A. Shappir, A. Shappir, A. Sa'ar, A. Sa'ar, } "Bias-controlled NIR/LWIR QWIP-based structure for night vision and see spot", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.498641; https://doi.org/10.1117/12.498641
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