10 October 2003 Composite substrate for large-format HgCdTe IRFPA
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Abstract
Research on silicon based composite substrates is being conducted at the Army Research Laboratory. These substrates can be used to deposit HgCdTe alloys to fabricate large-format infrared photodetector arrays. Traditionally, composite structures are fabricated by growing CdZnTe buffer layers on Si substrates using molecular beam epitaxy process. Recently, we have demonstrated that composite structures using CdSeTe can also be used. The CdSeTe compound offers better surface morphology and control of composition. In this work we present our results on the Si-based substrate technology and its application in the use of substrate material for LWIR HgCdTe detector development. In this paper we also present our study of molecular beam epitaxy and characteristics of CdSexTe1-x ternary films on Si. A detailed study of the alloy composition and lattice structures were investigated. In general, we find that the crystalline quality of CdSeTe films on Si is superior to CdZnTe on Si. Best CdSeTe/Si samples had EPD as low as 1.4x105 cm-2. This study also discusses a comparison of cation versus anion mixing in chalcogenide compounds. Results of LWIR detectors on CdTe/Si are also presented as a precursor and rational for a need of better lattice-matched substrates other than the conventional CdZnTe/Si substrates.
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Nibir K. Dhar, Nibir K. Dhar, Y. P. Chen, Y. P. Chen, Gregory N. Brill, Gregory N. Brill, Paul M. Amirtharaj, Paul M. Amirtharaj, Silviu Velicu, Silviu Velicu, Paul Boieriu, Paul Boieriu, Anthony G. Birdwell, Anthony G. Birdwell, Priyalal S. Wijewarnasuriya, Priyalal S. Wijewarnasuriya, "Composite substrate for large-format HgCdTe IRFPA", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003); doi: 10.1117/12.487725; https://doi.org/10.1117/12.487725
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